Visualizing the performance loss of solar cells by IR thermography - an evaluation study on CIGS with artificially induced defects
| Autor: | Andreas Vetter, Michael Richter, Bernhard Hofbeck, Christoph J. Brabec, Peter Kubis, J. Ohland, Ingo Riedel, S. J. Heise, Finn Babbe |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry 020209 energy Photovoltaic system 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Copper indium gallium selenide solar cells Focused ion beam Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Thermography 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Ohmic contact Copper indium gallium selenide Diode |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 24:1001-1008 |
| ISSN: | 1062-7995 |
| DOI: | 10.1002/pip.2749 |
| Popis: | Author(s): Vetter, A; Babbe, FS; Hofbeck, B; Kubis, P; Richter, M; Heise, SJ; Ohland, J; Riedel, I; Brabec, CJ | Abstract: Local electric defects may result in considerable performance losses in solar cells. Infrared (IR) thermography is one important tool to detect these defects on photovoltaic modules. Qualitative interpretation of IR images has been carried out successfully, but quantitative interpretation has been hampered by the lack of “calibration” defects. The aims of this study are to (i) establish methods to induce well-defined electric defects in thin-film solar cells serving as “calibration” defects and to (ii) assess the accuracy of IR imaging methods by using these artificially induced defects. This approach paves the way for improving quality control methods based on imaging in photovoltaic. We created ohmic defects (“shunts”) by using a focused ion beam and weak diodes (“interface shunts”) by applying a femto-second laser at rather low power on copper indium gallium selenide cells. The defects can be induced precisely and reproducibly, and the severity of the defects on the electrical performance can be well adjusted by focused ion beam/laser parameters. The successive assessment of the IR measurement (ILIT-Voc) revealed that this method can predict the losses in Pmpp (maximal power extractable) with a mean error of below 10%. Copyright © 2016 John Wiley a Sons, Ltd. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text