In-situ Plasma Conditioning of InGaAs / High-κ Interface Layers for Defect Density Control Compatible with Scalable FinFET Integration

Autor:	J. Rozen, Y. Ogawa, M. Hatanaka, T. Ando, E. Cartier, M.M. Frank, M. Hopstaken, J. Bruley, K.-T. Lee, J.-B. Yau, Y. Sun, R.L. Bruce, C. D'Emic, X. Sun, K. Suu, R.T. Mo, E. Leobandung, V. Narayanan
Rok vydání:	2018
Předmět:	In situ Materials science business.industry Interface (computing) Scalability Optoelectronics Plasma business
Zdroj:	Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::647169d610a6f88134c73cb5c035e338 https://doi.org/10.7567/ssdm.2018.c-8-02 Zobrazit plný text záznamu