Single-electron memory for giga-to-tera bit storage

Autor:	Tomoyuki Ishii, Tokuo Kure, T. Sano, Fumio Murai, Kazuo Yano, Toshiyuki Mine, Takayuki Hashimoto, T. Kobayashi, Koichi Seki
Rok vydání:	1999
Předmět:	business.industry Sense amplifier Computer science Registered memory Semiconductor memory Memory address Memory management Electronic engineering Interleaved memory Electrical and Electronic Engineering Memory refresh business Computer memory Computer hardware
Zdroj:	Proceedings of the IEEE. 87:633-651
ISSN:	0018-9219
DOI:	10.1109/5.752519
Popis:	Starting with a brief review on the single-electron memory and its significance among various single-electron devices, this paper addresses the key issues which one inevitably encounters when one tries to achieve giga-to-tera bit memory integration. Among the issues discussed are: room-temperature operation; memory-cell architecture; sensing scheme; cell-design guideline; use of nanocrystalline silicon versus lithography; array architecture; device-to-device variations; read/write error rate; and CMOS/single-electron-memory hybrid integration and its positioning among various memory architectures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6463eb532ff918dffffb0bd30cc3d4d2 https://doi.org/10.1109/5.752519 Zobrazit plný text záznamu