High aspect ratio through-wafer interconnections for 3D-microsystems

Autor:	Cassan C. C. Visser, A. Nichelatti, Lianwei Wang, C.R. de Boer, H. Schellevis, T.N. Nguyen, Pasqualina M. Sarro
Rok vydání:	2003
Předmět:	Microelectromechanical systems Materials science Silicon business.industry chemistry.chemical_element Polishing Lapping chemistry Microsystem Copper plating Electronic engineering Optoelectronics Wafer Integrated circuit packaging business
Zdroj:	The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE.
DOI:	10.1109/memsys.2003.1189829
Popis:	Closely spaced, through-wafer interconnects are of large interest in RF MEMS and MEMS packaging. In this paper, a suitable technique to realize large arrays of small size through-wafer holes is presented. This approach is based on macroporous silicon formation in combination with wafer thinning. Very high aspect ratio (/spl ges/ 100) structures are realized. The wafers containing the large arrays of 2-3/spl mu/m wide holes are thinned down to 200-150/spl mu/m by lapping and polishing. Copper electroplating is finally employed to realize arrays of high aspect ratio Cu plugs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::645e2a2770eced531362d216cf3caa43 https://doi.org/10.1109/memsys.2003.1189829 Zobrazit plný text záznamu