Magneto-current of magnetic tunnel transistors employing various Schottky junctions

Autor:	Takakazu Hirose, Tadashi Kobayashi, Mutsuko Jimbo, Yuji Fujiwara, Shigeru Shiomi
Rok vydání:	2005
Předmět:	Materials science Condensed matter physics Magnetoresistance Electrical junction Schottky barrier Transistor Schottky diode Condensed Matter Physics Metal–semiconductor junction Electronic Optical and Magnetic Materials law.invention Tunnel effect law Spin transistor
Zdroj:	Journal of Magnetism and Magnetic Materials. 286:124-127
ISSN:	0304-8853
DOI:	10.1016/j.jmmm.2004.09.051
Popis:	Magnetic tunnel transistors were prepared with different Schottky junctions: Pt/n-Si, Au/n-Si and NiFe/n-Si. The magneto-current as well as the collector current was found to depend strongly on the Schottky junction used. The largest collector current was obtained in the NiFe/n-Si junction, which was ten times larger than that of the Au/n-Si junction. The collector current of the Pt/n-Si junction was about one half of that of the Au/n-Si junction. However, in the Pt/n-Si junction that a magneto-current as high as 620%, followed by 530% in the Au/n-Si junction and 200% in the NiFe/n-Si junction.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6446d2adfb7050a1bf4d36ac400490fb https://doi.org/10.1016/j.jmmm.2004.09.051 Zobrazit plný text záznamu Full Text from ScienceDirect