Influence of hydrogen annealing on the properties of hafnium oxide thin films
| Autor: | I.A. Bakhtiari, M.B. Mekki, M.A. Dastageer, M.F. Al-Kuhaili, S.M.A. Durrani |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Condensed Matter Physics Electron beam physical vapor deposition law.invention Amorphous solid Carbon film X-ray photoelectron spectroscopy chemistry law General Materials Science Crystallization Thin film |
| Zdroj: | Materials Chemistry and Physics. 126:515-523 |
| ISSN: | 0254-0584 |
| DOI: | 10.1016/j.matchemphys.2011.01.036 |
| Popis: | Thin films of hafnium oxide were deposited by electron beam evaporation, and were subsequently annealed in hydrogen. X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, photoluminescence, spectrophotometry, and current–voltage measurements were performed to investigate the structural, chemical, optical, and electrical properties of the films. As-deposited films were amorphous and nearly stoichiometric. Annealing led to crystallization of the films, and reduction of stoichiometry. Photoluminescence measurements revealed the presence of oxygen-related defects. Optically, the films were transparent with a wide band gap, and this was not affected by hydrogen annealing. Moreover, the films were suitable as anti-reflection coatings on silicon. The electrical resistivity of the films was significantly reduced as a result of annealing. |
| Databáze: | OpenAIRE |
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