A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires
| Autor: | S. A. Kukushkin, Evgenii Ubyivovk, K. P. Kotlyar, G. E. Cirlin, Rodion R. Reznik, Alexander A. Koryakin |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon Scanning electron microscope business.industry Nucleation Nanowire chemistry.chemical_element 02 engineering and technology General Chemistry Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Semiconductor chemistry Optoelectronics General Materials Science Classical nucleation theory 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | CrystEngComm. 21:4707-4717 |
| ISSN: | 1466-8033 |
| DOI: | 10.1039/c9ce00774a |
| Popis: | We propose a new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires during molecular beam epitaxy (MBE). The nanowire MBE growth was achieved at a temperature of 270 °C on both Si(111) and SiC/Si(111) substrates. A special procedure of substrate preparation was used to obtain a high yield of nanowires grown perpendicularly to the substrate. The morphology of the InAs nanowire array was studied by scanning electron microscopy (SEM) revealing a significantly higher percentage of vertical InAs nanowires compared with previous works. The structural properties of nanowires and the catalyst composition were investigated by analytical methods of transmission electron microscopy (TEM). A theoretical assessment of the growth of InAs nanowires in the frame of the classical nucleation theory has shown the possibility of vapor–solid–solid growth at extremely low temperature, e.g., at 270 °C. It was found that the presence of elastic stresses due to the lattice mismatch between the solid catalyst particle and the nanowire material influences the nanowire growth rate. This important feature of nucleation in solid in the case of vapor–solid–solid growth of III–V nanowires was investigated for the first time. Also, we have shown that the material transport of arsenic towards the interface between the catalyst particle and the nanowire top limits the nanowire growth rate. Further development of the low-temperature growth methods facilitates the integration of III–V semiconductors with silicon electronics. |
| Databáze: | OpenAIRE |
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