Transport Properties of Anatase–TiO2 Polycrystalline-Thin-Film Field-Effect Transistors with Electrolyte Gate Layers

Autor:	Hiroya Nishida, Ryohei Horita, Kentaro Seo, Mio Sakai, Yusuke Murao, Taku Toya, Tetsuji Okuda, Takahiro Kai, Kyosuke Ohtani
Rok vydání:	2013
Předmět:	Materials science business.industry Transistor Gate dielectric General Engineering General Physics and Astronomy Nanotechnology Time-dependent gate oxide breakdown Electrolyte law.invention Capacitor law Gate oxide Optoelectronics Field-effect transistor Thin film business
Zdroj:	Japanese Journal of Applied Physics. 52:115803
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjap.52.115803
Popis:	We have fabricated anatase–TiO2 polycrystalline-thin-film field-effect transistors (FETs) with poly(vinyl alcohol) (PVA), ion-liquid (IL), and ion-gel (IG) gate layers, and have tried to improve the response to gate voltage by varying the concentration of mobile ions in these electrolyte gate layers. The increase in the concentration of mobile ions by doping NaOH into the PVA gate layer or reducing the gelator in the IG gate layer markedly increases the drain–source current and reduces the driving gate voltage, which show that the mobile ions in the PVA, IL, and IG gate layers cause the formation of electric double layers (EDLs), which act as nanogap capacitors. In these TiO2-EDL-FETs, the slow formation of EDLs and the oxidation reaction at the interface between the surface of the TiO2 film and the electrolytes cause unideal FET properties. In the optimized IL and IG TiO2-EDL-FETs, the driving gate voltage is less than 1 V and the ON/OFF ratios of the transfer characteristics are about 1×104 at RT, and the nearly metallic state is realized at the interface purely by applying a gate voltage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6437ba3e824b2695479afc0b9a4a25f3 https://doi.org/10.7567/jjap.52.115803 Zobrazit plný text záznamu