Epitaxial L10-MnAl Thin Films With High Perpendicular Magnetic Anisotropy and Small Surface Roughness
| Autor: | Most Shahnaz Parvin, Yasuo Ando, Masakiyo Tsunoda, Mikihiko Oogane, Miho Kubota |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Annealing (metallurgy) 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Tunnel magnetoresistance Magnetic anisotropy Magnetization Sputtering 0103 physical sciences Surface roughness Electrical and Electronic Engineering Thin film 0210 nano-technology |
| Zdroj: | IEEE Transactions on Magnetics. 54:1-4 |
| ISSN: | 1941-0069 0018-9464 |
| DOI: | 10.1109/tmag.2018.2834553 |
| Popis: | L10-ordered MnAl thin films were epitaxially grown by sputtering technique. The substrate and annealing temperature dependences of the structural and magnetic properties of the films were systematically investigated to improve the magnetic properties and surface roughness. A low substrate temperature and subsequent post-annealing are the useful process to obtain MnAl films with both high magnetic anisotropy $K_{u}$ and small surface roughness $R_{a}$ . We have successfully fabricated MnAl thin films deposited on MgO substrates and Cr90Ru10 buffer layers with the very high $K_{u}$ of 13 Merg/cm3, relatively small magnetization of 500 emu/cm3, and small $R_{a}$ of 0.34 nm by optimization of the substrate and post-annealing temperatures. The obtained MnAl films will be greatly useful to realize the high-density spin-transfer-torque magnetic random access memory. |
| Databáze: | OpenAIRE |
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