Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field
Autor: | Yu. S. Nagornov, A. V. Zolotov, B. M. Kostishko |
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Rok vydání: | 2009 |
Předmět: | |
Zdroj: | Semiconductors. 43:355-358 |
ISSN: | 1090-6479 1063-7826 |
DOI: | 10.1134/s1063782609030178 |
Popis: | The results of simulation of processes of thermal annealing of porous silicon under the effect of high-temperature heating both in a homogeneous temperature field and under conditions of the presence of a linear temperature gradient in the system are reported. |
Databáze: | OpenAIRE |
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