Simulation of degradation of the profile of nanoporous silicon in the course of annealing in an inhomogeneous temperature field

Autor: Yu. S. Nagornov, A. V. Zolotov, B. M. Kostishko
Rok vydání: 2009
Předmět:
Zdroj: Semiconductors. 43:355-358
ISSN: 1090-6479
1063-7826
DOI: 10.1134/s1063782609030178
Popis: The results of simulation of processes of thermal annealing of porous silicon under the effect of high-temperature heating both in a homogeneous temperature field and under conditions of the presence of a linear temperature gradient in the system are reported.
Databáze: OpenAIRE