Peculiarities of the oxidation of porous silicon during aqueous after-etching
| Autor: | S. V. Appolonov, B. M. Kostishko, A. E. Kostishko, S. Ya. Salomatin |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Auger electron spectroscopy
Aqueous solution Materials science Physics and Astronomy (miscellaneous) Silicon technology industry and agriculture Nanocrystalline silicon chemistry.chemical_element macromolecular substances equipment and supplies Porous silicon chemistry Chemical engineering Etching (microfabrication) Phase (matter) Surface layer |
| Zdroj: | Technical Physics Letters. 30:259-261 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/1.1748593 |
| Popis: | The process of oxidation of the surface of porous silicon in the course of aqueous after-etching has been studied by monitoring the change in the shape of the inverse self-convolution of a SiL23VV peak in the Auger electron spectrum. It was found that the formation of SiOx in the surface layer of samples proceeds in several stages. In the first stage, silicon suboxides composed of SiOnSi4−n tetrahedra (n=1–3) are formed on the surface of silicon quantum filaments. The formation of a SiO2 phase stable with respect to external factors begins only upon 20-h aqueous after-etching and is completed within seven days. |
| Databáze: | OpenAIRE |
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