Low-frequency capacitance–voltage characterization of deep levels in film–buffer layer–substrate GaAs structures
| Autor: | Inna F. Kodzhespirova, Evgeny F. Prokhorov, Yury A. Kovalenko, Nikolai B. Gorev, Sergey A. Kostylev |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
business.industry Substrate (electronics) Trapping Low frequency Condensed Matter Physics Buffer (optical fiber) Electronic Optical and Magnetic Materials Characterization (materials science) Capacitance voltage Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | Solid-State Electronics. 43:169-176 |
| ISSN: | 0038-1101 |
| Popis: | The low-frequency capacitance–voltage characteristic of a three-layered GaAs structure (a low-resistivity film, a buffer layer, and a semi-insulating substrate) exhibits a rising portion due to the emptying of deep levels at the film–buffer layer junction or at both the film–buffer layer and buffer layer–substrate junctions. This rising portion makes it possible to specify the effective concentration of vacant deep levels in the buffer layer and substrate which is responsible for the carrier trapping to these levels. It is shown that there is a threshold effective concentration (about 1×10 16 cm −3 ) at which a noticeable trapping emerges. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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