Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration

Autor:	R. H. Mathews, C. L. Chen, L.J. Mahoney, K.M. Molvar, P.A. Maki, S.D. Calawa, J.P. Sage, T.C.L.G. Sollner
Rok vydání:	1999
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Transistor Epitaxy law.invention Gallium arsenide chemistry.chemical_compound Ion implantation chemistry law MOSFET Optoelectronics Wafer business Molecular beam Layer (electronics)
Zdroj:	Applied Physics Letters. 74:4058-4060
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.123260
Popis:	Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-quality GaAs. The high resistivity of the oxygen-implanted area was maintained after the regrowth and no oxygen incorporation was observed in the regrown layer. The cutoff frequency of a 1.5-μm-gate metal-semiconductor field-effect transistor fabricated on the regrown layer over the high-resistivity areas is 7 GHz. This demonstration shows that planar technology can be used in epitaxial regrowth, simplifying the integration of vastly different devices into monolithic circuits.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::64218fce0171f8839718210432977745 https://doi.org/10.1063/1.123260 Zobrazit plný text záznamu