Application of the time‐resolved optical‐beam‐induced current method to the investigation ofn‐metal‐oxide‐semiconductor inverters

Autor:	H. Bergner, U. Stamm, A. Krause, K. Hempel
Rok vydání:	1992
Předmět:	Optical beam-induced current business.industry Chemistry Transistor Physics::Optics General Physics and Astronomy Integrated circuit Optical switch law.invention Optical pumping Optics law Physics::Accelerator Physics Light beam business Excitation Beam (structure)
Zdroj:	Journal of Applied Physics. 71:3010-3018
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.350983
Popis:	A pump and probe beam technique is demonstrated in conjunction with the optical‐beam‐induced current method of laser scanning microscopy which allows one to measure the dynamics of internal signals in integrated circuits. The time resolution of the measurement is limited only by the duration of the applied light pulses as well as the integrated circuit (IC) itself. The method is based on the generation of electrical pulses inside the IC switching a turned‐off metal‐oxide‐semiconductor (MOS) transistor optically with short light pulses. The propagation of the electrical pulse in a chain of n‐MOS inverters is studied on a subnanosecond time scale. A simple approach to the mechanisms of the generation of the optical‐beam‐induced current as well as the optical switching of MOS transistors is given. Optimum conditions for the laser beam power for both the excitation and the probe beam are discussed. The generation of the optical‐beam‐induced current in dependence on the position of the illuminating laser beam ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::641857d15f80bbd2720db89b0d4d3472 https://doi.org/10.1063/1.350983 Zobrazit plný text záznamu