Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2

Autor:	Taro Arakawa, Tatsuya Suzuki, G. Segami, Yukihiro Shimogaki, Yoshiaki Nakano, Nobuo Haneji, Kunio Tada
Rok vydání:	2003
Předmět:	Semiconductor Materials science Ashing business.industry Etching (microfabrication) Analytical chemistry Dry etching Reactive-ion etching business Layer (electronics) Electron cyclotron resonance Ion
Zdroj:	2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..
Popis:	In this study, we introduced constant Ar flow to the cyclic etching in order to remove the alumina layer formed during ashing intervals by the Ar ion etching, and studied the etching conditions for various III-V semiconductor materials. It was demonstrated diat the combination of the cyclic etching with/without constant Ar flow and the continuous etching is useful for etching the device structure containing multi-semiconductor layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::641433644866721540a1f07259a87689 https://doi.org/10.1109/imnc.2002.1178548 Zobrazit plný text záznamu