Modelling the effect of an impurity band on the I-V characteristics of resonant tunnelling diodes
| Autor: | R T Syme |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Condensed matter physics
Chemistry Band gap Doping Analytical chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Semimetal Electronic Optical and Magnetic Materials Condensed Matter::Superconductivity Materials Chemistry Tunnel diode Direct and indirect band gaps Electrical and Electronic Engineering Quantum tunnelling Quasi Fermi level Diode |
| Zdroj: | Semiconductor Science and Technology. 7:71-74 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Resonant tunnelling diodes for device applications often have to contain very heavily doped contact regions. When the doping is so high, there is a substantial degree of auto-compensation of the dopant, and the impurity band merges with the conduction band, giving a large band tail in the density of states at the bottom of the conduction band. The effect of this band tail on the current-voltage characteristics is investigated, using the GaAs/AlGaAs double-barrier diode as an example system. The bias at peak current is found to increase, and the peak itself to broaden. A small increase in valley current is also found. Also, experiments are suggested in which double-barrier diodes with deliberately heavily doped, highly compensated contact regions are used to study the extent of the impurity band. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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