Optimization and characterization of i/p buffer layer in hydrogenated nanocrystalline silicon solar cells

Autor:	Guozhen Yue, Baojie Yan, Subhendu Guha, Charles W. Teplin, Jeffrey Yang
Rok vydání:	2008
Předmět:	Materials science Nanocrystalline silicon Analytical chemistry Dominant factor Condensed Matter Physics Layer thickness Buffer (optical fiber) Electronic Optical and Magnetic Materials Key factors Materials Chemistry Ceramics and Composites Layer (electronics) Recombination Dark current
Zdroj:	Journal of Non-Crystalline Solids. 354:2440-2444
ISSN:	0022-3093
DOI:	10.1016/j.jnoncrysol.2007.09.037
Popis:	The effect of a-Si:H i/p buffer layer on the performance of nc-Si:H solar cells is studied systematically. The results show that for thin nc-Si:H cells, an optimized i/p buffer layer significantly reduces the dark current thus increases the open-circuit voltage. We believe that the carrier recombination at the i/p interface is one of the determining factors for the nc-Si:H cell performance, especially for cells with a thin intrinsic layer. Therefore, optimizing the i/p buffer layer is one of the key factors for achieving high efficiency nc-Si:H solar cells. This interface effect is less pronounced as the nc-Si:H intrinsic layer thickness increases, where the recombination in the bulk becomes a dominant factor. Combining the improved nc-Si:H intrinsic layer with a proper hydrogen dilution and an optimized a-Si:H i/p buffer layer, the performance of nc-Si:H single-junction and a-Si:H/a-SiGe:H/nc-Si:H triple-junction cells is significantly improved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6402d1fa1e68b1981e332f2ea60140e2 https://doi.org/10.1016/j.jnoncrysol.2007.09.037 Zobrazit plný text záznamu Full Text from ScienceDirect