Body Effect in Tri- and Pi-Gate SOI MOSFETs
Autor: | M. Gostkowski, T. Schulz, J.R. Zaman, A. Vazquez, Ken Matthews, Jean-Pierre Colinge, Weize Xiong, James M. Frei, Chad Johns, Nirmal Chaudhary, C. R. Cleavelin, G. Gebara |
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Rok vydání: | 2004 |
Předmět: |
Capacitive coupling
Coupling Materials science Computer simulation business.industry Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials Computer Science::Hardware Architecture Computer Science::Emerging Technologies Shield Electric field MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering business Hardware_LOGICDESIGN |
Zdroj: | IEEE Electron Device Letters. 25:813-815 |
ISSN: | 0741-3106 |
DOI: | 10.1109/led.2004.839223 |
Popis: | A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body factor in such devices, as well as by experimental results. The body factor is much smaller than in regular, single-gate silicon-on-insulator devices because of the enhanced coupling between gate and channel and because the lateral gates shield the device from the electrostatic field from the back gate. |
Databáze: | OpenAIRE |
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