Body Effect in Tri- and Pi-Gate SOI MOSFETs

Autor: M. Gostkowski, T. Schulz, J.R. Zaman, A. Vazquez, Ken Matthews, Jean-Pierre Colinge, Weize Xiong, James M. Frei, Chad Johns, Nirmal Chaudhary, C. R. Cleavelin, G. Gebara
Rok vydání: 2004
Předmět:
Zdroj: IEEE Electron Device Letters. 25:813-815
ISSN: 0741-3106
DOI: 10.1109/led.2004.839223
Popis: A simple model based on the representation of capacitive coupling effects between the front- and back-gate and the channels, has been developed for tri-gate and pi-gate SOI MOSFETs. The model has been validated using numerical simulation of the body factor in such devices, as well as by experimental results. The body factor is much smaller than in regular, single-gate silicon-on-insulator devices because of the enhanced coupling between gate and channel and because the lateral gates shield the device from the electrostatic field from the back gate.
Databáze: OpenAIRE