Study of a New Field-Effect Resistive Hydrogen Sensor Based on a Pd/Oxide/AlGaAs Transistor
| Autor: | Yan-Ying Tsai, Ssu-I Fu, Tzu-Pin Chen, Hung-Chi Chang, Ching-Wen Hung, Po-Hsien Lai, Huey-Ing Chen, Wen-Chau Liu |
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| Rok vydání: | 2007 |
| Předmět: |
Resistive touchscreen
Hydrogen Chemistry Transistor Oxide Analytical chemistry Field effect chemistry.chemical_element High-electron-mobility transistor Hydrogen sensor Dissociation (chemistry) Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound law Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Electron Devices. 54:1224-1231 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2007.893813 |
| Popis: | A new and interesting field-effect resistive hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based pseudomorphic high-electron-mobility transistor structure and high hydrogen sensitivity of a palladium (Pd) metal, is studied and demonstrated. An oxide layer between Pd and AlGaAs is used to increase the number of hydrogen adsorption sites, and improve hydrogen detection sensitivity. A simple model is employed to interpret the hydrogen adsorption and sensing mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipolar layer cause a significant decrease in channel resistance. In comparison with other resistor-type hydrogen sensors, the studied device demonstrates the considerable advantages of lower detection limit (< 4.3 ppm H2 /air) and higher sensitivity (24.7% in 9970 ppm H2/air) at room temperature. Also, the studied device exhibits a smaller resistance (several 10 Omega) and a smaller operating voltage (les 0.3 V) which are superior to other resistive sensors with typically larger resistances (ranged from kiloohms to megaohms) and larger voltages (ges 1 V). Consequentially, the studied resistive sensor provides the promise for low-power GaAs-based electronic and microelectromechanical-system applications |
| Databáze: | OpenAIRE |
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