IGBT with superior long-term switching behavior by asymmetric trench oxide
| Autor: | H.-J. Schulze, Franz Josef Niedernostheide, Philip Christoph Brandt, Andre Rainer Stegner, Wolfgang Wagner, Frank Umbach, Christian Philipp Sandow, Hans-Peter Felsl, F. Pfirsch, F. Santos |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Electrical engineering Oxide Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Insulated-gate bipolar transistor Chip 01 natural sciences law.invention chemistry.chemical_compound chemistry Gate oxide law Logic gate 0103 physical sciences Trench Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Resistor business Degradation (telecommunications) |
| Zdroj: | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2018.8393593 |
| Popis: | The continued shrinking of IGBT chips calls for new design approaches to ensure reliable and stable switching operation during the chip lifetime. We demonstrate a new asymmetric gate oxide concept with a designed variable thickness that leads to stable long-term operation in trench IGBTs and reduces the switching delay and the gate charge without sacrificing electrical performance. These claims are supported by longer-term repetitive switching experiments as well as TCAD simulations on a calibrated model. |
| Databáze: | OpenAIRE |
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