Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

Autor:	Andrej Yu. Kuznetsov, Vanessa Vervisch, F. Issa, M. Lazar, Anders Hallén, Abdallah Lyoussi, A. Klix, Stephane Biondo, Wilfried Vervisch, L. Vermeeren, Laurent Ottaviani, Dora Szalkai
Rok vydání:	2014
Předmět:	Materials science business.industry Instrumentation Detector Isotopes of boron Neutron temperature chemistry.chemical_compound chemistry Silicon carbide Neutron detection Optoelectronics Irradiation business Nuclear chemistry Voltage
Zdroj:	MRS Proceedings. 1693
ISSN:	1946-4274 0272-9172
DOI:	10.1557/opl.2014.691
Popis:	The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::63ee8b12e1eea3a5cf82547dfbb46d10 https://doi.org/10.1557/opl.2014.691 Zobrazit plný text záznamu Full text from SpringerLink