Simultaneous optimization of doping profile and Ge-dose in base in SiGe HBTs

Autor:	B. Brishbhan Panwar, G. Khanduri
Rok vydání:	2007
Předmět:	Materials science Carrier velocity saturation Dopant business.industry Iterative methodology Doping Electronic engineering Optoelectronics Transit time Simultaneous optimization business Base (exponentiation) Doping profile
Zdroj:	Proceedings 2007 IEEE SoutheastCon.
DOI:	10.1109/secon.2007.342969
Popis:	This work presents an approach to optimize the base doping and Ge-dose inside the base of SiGe HBTs using the fixed point iterative methodology and includes the effect of minority carrier velocity saturation on total base transit time for SiGe HBTs. It is shown that shifted-Ge approach and linear Ge-profile in base can lead to simultaneous optimization of Ge-dose and base dopant distribution for minimum base transit time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::63e93659f6ee38d5e007998c8b586983 https://doi.org/10.1109/secon.2007.342969 Zobrazit plný text záznamu