Plasma-chemical deposition of SiCN films from volatile N-bromhexamethyldisilazane
| Autor: | V. I. Rakhlin, V. O. Borisov, A. M. Badalian, T. A. Podgorbunskaya, L. F. Bakhturova, Tamara P. Smirnova, Vasily V. Kaichev |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Chemical deposition General Chemical Engineering Metals and Alloys chemistry.chemical_element Plasma Inorganic Chemistry Growth velocity chemistry.chemical_compound Chemical engineering chemistry Materials Chemistry Remote plasma Organic chemistry Chemical composition Organosilicon |
| Zdroj: | Inorganic Materials. 44:1312-1318 |
| ISSN: | 1608-3172 0020-1685 |
| Popis: | Process of silicon-carbonitride (SiCN) film production from a new volatile organosilicon, N-bromhexamethyldisilazane, is developed. The use of this chemical comprising the relatively week N-Br bond makes it possible to increase the film growth velocity in the plasma-chemical process with remote plasma in comparison with the processed in which hexamethyldisilazane and hexamethylcyclotrisilazane are used. The chemical composition of the films is determined using a complex of spectroscopic methods. It is found that inorganic SiCN films containing Si-N, Si-C, and C-N bonds are deposited at temperatures 570–870 K. The C-N bonds are formed already at a temperature of about 470 K. It is shown that the use of this volatile organosilicon material makes it possible to synthesize silicon carbonitrides with various ratios of the Si-C, Si-C, and C-N bonds. This enriches the possibilities of producing films and coatings with various functional parameters. The nanohardness of 100-nm films prepared at T > 770 K is 17 GPa. |
| Databáze: | OpenAIRE |
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