Highly Focused Ion Beams in Integrated Circuit Testing
| Autor: | B. L. Doyle, P.E. Dodd, K.M. Horn |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Microprobe
Materials science Ion beam business.industry Mechanical Engineering Integrated circuit Electrostatic induction Condensed Matter Physics law.invention Ion Mechanics of Materials law Single event upset Electronic engineering Optoelectronics General Materials Science Field-effect transistor business Electronic circuit |
| Zdroj: | Materials Science Forum. :427-432 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.248-249.427 |
| Popis: | The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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