Failure analysis of Through-Silicon-Vias Aided by high-speed FIB silicon removal

Autor:	Michele Mercier, Pascal Gounet, David Serre, Chad Rue
Rok vydání:	2009
Předmět:	Materials science Silicon chemistry business.industry Semiconductor materials Delamination Electronic engineering Optoelectronics chemistry.chemical_element Substrate (electronics) Semiconductor device business Electronic mail
Zdroj:	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
DOI:	10.1109/ipfa.2009.5232689
Popis:	High-speed FIB silicon trenching is used to remove substrate materials around large structures on semiconductor devices. After removing the surrounding substrate material, it is possible to perform FIB cross-sectional analyses on structures that would normally be too large for such an approach. Through-Silicon-Vias (TSVs) are examined in detail, but other applications are also briefly described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::63dfe9bdb225f00e94521d90b74170fe https://doi.org/10.1109/ipfa.2009.5232689 Zobrazit plný text záznamu