NVM Characteristics of Single-MOSFET Cells Using Nitride Spacers With Gate-to-Drain NOI
| Autor: | Chih-Hsueh Hon, Pai-Chu Kao, Chen-Chia Fan, Wei-Chain Kung, Zih-Wun Wang, Chia-Sung Chiu, Chien-Sheng Hsieh, E.S. Jeng |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Charge carrier injection Electrical engineering Nitride Electronic Optical and Magnetic Materials Non-volatile memory chemistry.chemical_compound Reliability (semiconductor) Silicon nitride chemistry MOSFET Memory architecture Optoelectronics Electrical and Electronic Engineering business Hot carrier effect |
| Zdroj: | IEEE Transactions on Electron Devices. 51:1811-1817 |
| ISSN: | 0018-9383 |
| Popis: | This work presents the characteristics of a two-bit-per-cell charge-trapping nonvolatile memory (NVM) device by using gate-to-drain nonoverlapped implanted (NOI) n-MOSFETs. Hot carriers are generated in NOI devices and injected into the silicon nitride spacers. The characteristics of this potential single-transistor NVM cell, including two-bit operation, programming and erasing characteristics, are investigated. Their stability and reliability characteristics such as retention, disturbance and cycling are also evaluated. |
| Databáze: | OpenAIRE |
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