Very high frequency plasma reactant for atomic layer deposition
| Autor: | Han-Bo-Ram Lee, Chang Mo Yoon, Tae Hyung Kim, Zonghoon Lee, Il Kwon Oh, Hanearl Jung, Kangsik Kim, Geun Young Yeom, Hyungjun Kim, Gilsang Yoo, Chang Wan Lee |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
business.industry Chemistry Analytical chemistry General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Plasma Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Atomic layer deposition 0103 physical sciences Electron temperature Optoelectronics Thin film Electric current 0210 nano-technology business Plasma processing High-κ dielectric |
| Zdroj: | Applied Surface Science. 387:109-117 |
| ISSN: | 0169-4332 |
| Popis: | Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in the formation of high-k dielectrics, including a low processing temperature and improved film properties compared to conventional thermal ALD, energetic radicals and ions in the plasma cause damage to layer stacks, leading to the deterioration of electrical properties. In this study, the growth characteristics and film properties of PE-ALD Al2O3 were investigated using a very-high-frequency (VHF) plasma reactant. Because VHF plasma features a lower electron temperature and higher plasma density than conventional radio frequency (RF) plasma, it has a larger number of less energetic reaction species, such as radicals and ions. VHF PE-ALD Al2O3 shows superior physical and electrical properties over RF PE-ALD Al2O3, including high growth per cycle, excellent conformality, low roughness, high dielectric constant, low leakage current, and low interface trap density. In addition, interlayer-free Al2O3 on Si was achieved in VHF PE-ALD via a significant reduction in plasma damage. VHF PE-ALD will be an essential process to realize nanoscale devices that require precise control of interfaces and electrical properties. |
| Databáze: | OpenAIRE |
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