Nanometer-deep junctions with high doping concentration for Ge SDEs using solid source doping and flash lamp annealing
| Autor: | Shinichi Kato, Ippei Kobayashi, Timothee Julien Vincent Blanquart, Hideaki Tanimura, Takayuki Aoyama, Takahiro Yamada, Kazuhiko Fuse, Nadine Collaert |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Flash-lamp Materials science business.industry Annealing (metallurgy) Doping 0211 other engineering and technologies 02 engineering and technology 01 natural sciences Ion implantation CMOS Electrical resistivity and conductivity 021105 building & construction 0103 physical sciences Electronic engineering Optoelectronics Nanometre business |
| Zdroj: | 2017 17th International Workshop on Junction Technology (IWJT). |
| DOI: | 10.23919/iwjt.2017.7966501 |
| Popis: | In recent years Solid Source Doping (SSD) has been considered as a viable option in fabricating advanced CMOS devices [1], especially for forming shallow and highly doped junctions for source drain extensions (SDE) while minimizing the damage to the devices [2]. Current scaled devices require diffusion control in the nanometer range in order to form shallow SDEs using SSD. Additionally, high doping concentrations are needed to lower the resistivity (see Fig. 1). |
| Databáze: | OpenAIRE |
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