Evolution of a dense interlayer in a-SiNx:H thin films under 100 MeV Ni7+ ion irradiation

Autor:	S. Ghosh, P. C. Srivastava, R. K. Bommali
Rok vydání:	2017
Předmět:	chemistry.chemical_compound Materials science chemistry Hydrogen Silicon nitride Analytical chemistry Oxide chemistry.chemical_element Irradiation Thin film Nitrogen Layer (electronics) Amorphous solid
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
DOI:	10.1063/1.4980548
Popis:	The irradiation of sub-stoichiometric amorphous hydrogenated Silicon nitride (a-SiNx:H) films with 100 MeV Ni7+ ions leads to a loss of hydrogen from these films and results in a compacted and denser films. It has been found that in addition to hydrogen, the nitrogen in the films tends to out-diffuse. However nitrogen is trapped close surface of a-SiNx:H films. This is a result of self-limiting process of nitrogen trapping at the interface of the film and the ambient oxide layer. The continuous trapping of nitrogen leads to formation of a thin but dense layer which prevents the escape of nitrogen atoms from the films.
Databáze:	OpenAIRE
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