High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates

Autor:	Francoise Mertz, Steven D. Lester, Jeffrey N. Miller, David P. Bour, Virginia M. Robbins
Rok vydání:	2004
Předmět:	Materials science Silicon business.industry Wafer bonding Single-mode optical fiber chemistry.chemical_element Electron Wavelength chemistry.chemical_compound chemistry Tunnel junction Silicide Optoelectronics Wafer business
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.540323
Popis:	We demonstrate novel electrically driven 1330 and 1550 nm VCSELs using conventional InGaAsP active regions. The VCSELs employ two TiO2/SiO2 DBR mirrors and an InAlAs tunnel junction that converts electrons to holes, minimizing free carrier losses in the p-type material. The active layers are transferred onto Si wafers using wafer-scale Pd silicide bonding. We have obtained single-mode room-temperature output powers as high as 2.4mW at 1330nm and 2.7mW at 1550nm. At 80C we have obtained 0.6mW of single-mode power at 1330nm and over 1 mW at 1550nm. These are the highest power single-mode InP-based VCSELs reported in these wavelength ranges.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::63afe38409be7a4a3c2abd4c2829673d https://doi.org/10.1117/12.540323 Zobrazit plný text záznamu