Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Autor:	Kazimieras Badokas, Gintautas Tamulaitis, Tadas Malinauskas, Sandra Stanionytė, D. Dobrovolskas, J. Mickevičius, Arūnas Kadys, J. Jurkevičius
Rok vydání:	2014
Předmět:	Materials science Photoluminescence business.industry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Volumetric flow rate chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy Thin film Boron business
Zdroj:	physica status solidi (b). 252:1138-1141
ISSN:	0370-1972
Popis:	BGaN epilayers were grown on GaN/sapphire templates in hydrogen atmosphere by metal organic chemical vapor deposition (MOCVD). The growth was attempted at different temperatures and flow rates of triethylboron, which was used as boron precursor. According to XRD measurements, up to 2.9% of boron was incorporated in 500 nm-thick BGaN layers deposited at 870 °C. Comparison of XRD results with the red shift observed in the photoluminescence band with increasing boron content confirms an extremely large value of ∼10 eV for the bowing parameter in BGaN.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::63adb0b33fce3e630befd445c5e91855 https://doi.org/10.1002/pssb.201451560 Zobrazit plný text záznamu Plný text