Deep trap characterization of Al./sub 48/In./sub 52/As/In/sub .52/(Ga/sub .7/Al/sub .3/)/sub .48/As heterostructures

Autor:	K. Rezzoug, F. Ducroquet, J.P. Praseuth, G. Guillot, L. Giraudet
Rok vydání:	2002
Předmět:	chemistry.chemical_compound Materials science Deep-level transient spectroscopy chemistry Impurity Analytical chemistry Heterojunction Wafer Electron Ternary operation Characterization (materials science) Gallium arsenide
Zdroj:	Proceedings of Semiconducting and Semi-Insulating Materials Conference.
DOI:	10.1109/sim.1996.571102
Popis:	Electron traps in AlInAs/In/sub .52/(Ca/sub 1-x/Al/sub x/)/sub .48/As (x=0.3) heterostructures are investigated by deep level transient spectroscopy. Two dominant traps with activation energies of 0.31 and 0.59 eV are observed in quaternary and ternary layers respectively. Both these levels are supposed to be intrinsic defects from the same origin. Another defect at E/sub c/-0.4 eV is detected at the AlInAs/InCaAlAs interface. The concentration of this trap is found to be non uniformly distributed on the wafer and possible impurity contamination is suggested.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::63ab1d44ecfed2788ac44c64b0e92549 https://doi.org/10.1109/sim.1996.571102 Zobrazit plný text záznamu