Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
Autor: | Jaehoo Park, Moonju Cho, Hong-bae Park, Jaehack Jeong, Kwang Soo Hyun, Cheol Seong Hwang |
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Rok vydání: | 2002 |
Předmět: | |
Zdroj: | Applied Physics Letters. 81:334-336 |
ISSN: | 1077-3118 0003-6951 |
Popis: | HfO2 thin films were deposited on Si wafers using an atomic layer deposition technique at temperatures ranging from 200 to 400 °C with HfCl4 as the precursor and H2O as the oxidant. The time-dependent interfacial-layer growth behavior was dependent on the deposition temperature. The interfacial layer grew with increasing deposition time at 200 °C. However, the film thicknesses decreased with increasing deposition time after reaching a certain maximum value at 300 and 400 °C due to the enhanced dissolution of SiOx into the growing films at these temperatures. Post-annealing at 800 °C under a N2 atmosphere resulted in the precipitation of a Si-rich interfacial layer even for the initially interfacial layer free films. This had the effect of reducing the capacitance density of the films. |
Databáze: | OpenAIRE |
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