High-Temperature Stable $\hbox{Ir}_{x}\hbox{Si}$ Gates With High Work Function on HfSiON p-MOSFETs
| Autor: | H.J. Tao, Shui-Jinn Wang, Chang-Luen Wu, B.F. Hung, Mong-Song Liang, Yong-Tian Hou, F.Y. Yen, Y. Jin, A. Chin, Shui-Hung Chen |
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| Rok vydání: | 2007 |
| Předmět: |
Electron mobility
Fabrication Materials science business.industry Fermi level Transistor Electrical engineering Electronic Optical and Magnetic Materials Amorphous solid law.invention symbols.namesake law MOSFET symbols Optoelectronics Work function Electrical and Electronic Engineering Power MOSFET business |
| Zdroj: | IEEE Transactions on Electron Devices. 54:257-261 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | A novel 1000 degC-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in IrxSi/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface |
| Databáze: | OpenAIRE |
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