Semiconductor lasers: past achievements and future challenges

Autor: M.H. Pilkuhn
Rok vydání: 2003
Předmět:
Zdroj: 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).
DOI: 10.1109/leos.1999.813447
Popis: The impressive development of semiconductor lasers started in 1962 with simple homojunction structures, exhibiting very large threshold currents, and only at low temperatures and under pulsed operation. Even the report of CW operation at 77 K generated strong, disbelief in the early days. Nobody would have anticipated the dramatic developments which followed, for instance, in the reduction of threshold currents. If one plots the threshold current in a logarithmic scale vs. the year, one gets a nearly linear relation which can be considered as "Moore's Law of Optoelectronics".
Databáze: OpenAIRE