Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation
| Autor: | Norbert Kaiser, H. Bernitzki, Sven Laux, R. Götzelmann, A. Zöller, Hans Lauth |
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| Rok vydání: | 1998 |
| Předmět: |
Chemistry
business.industry Band gap Metals and Alloys Analytical chemistry Surfaces and Interfaces Electron beam physical vapor deposition Evaporation (deposition) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide Optics Electrical resistivity and conductivity Absorptance Materials Chemistry Deposition (phase transition) Thin film business |
| Zdroj: | Thin Solid Films. 335:1-5 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(98)00861-x |
| Popis: | The electrical and optical properties of indium tin oxide (ITO) thin films deposited by plasma ion-assisted evaporation are reported. With deposition at room temperature using certain ion-source parameters ITO films with an electrical resistivity of 5×10−6 Ω m and an absorptance at 550 nm of less than 5% for 300 nm film thickness were obtained. Variation of oxygen pressure during deposition results in different band gap energies and different resistivities. The complex index of refraction was determined using a dispersion model suitable for explaining the particular properties of ITO in the visible and near infrared spectral range. |
| Databáze: | OpenAIRE |
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