Oxidation and reduction of thin Ru films by gas plasma
| Autor: | Iwao Nishiyama, Y. Iwasaki, H. Tsurumaki, Akira Namiki, Akira Izumi, Hiroaki Oizumi |
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| Rok vydání: | 2007 |
| Předmět: |
Photoemission spectroscopy
Chemistry Inorganic chemistry Analytical chemistry Oxide General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound X-ray photoelectron spectroscopy Transition metal Desorption Thin film Layer (electronics) Stoichiometry |
| Zdroj: | Applied Surface Science. 253:8699-8704 |
| ISSN: | 0169-4332 |
| Popis: | The oxidation and reduction of Ru thin films grown on a Si(1 0 0) surface were studied by X-ray photoemission spectroscopy (XPS). Ru thin films were oxidized with O 2 plasma generated by an rf discharge, and their XPS spectra were measured. The spectra were decomposed into several components for Ru suboxides attributable to different stages of oxidation. After sufficient exposure to oxygen, a stoichiometric rutile RuO 2 layer was found to have formed near the surface. Thermal annealing at 500 K resulted in a thicker RuO 2 layer. Experiments demonstrated that the Ru oxide layer can be removed by H(D) atoms via the desorption of water molecules. |
| Databáze: | OpenAIRE |
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