Current–voltage characteristics of high-resistive ZnO thin films deposited by RF magnetron sputtering

Autor:	Takahiro Makino, Hajime Yamada, Yukio Yoshino, H. Kawamura, Seiichi Arai, Masaki Takeuchi
Rok vydání:	2004
Předmět:	Electron mobility Materials science Drift velocity business.industry Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Sputtering Residual stress Electric field Optoelectronics Thin film business Instrumentation Saturation (magnetic)
Zdroj:	Vacuum. 74:567-570
ISSN:	0042-207X
DOI:	10.1016/j.vacuum.2004.01.028
Popis:	Current–voltage properties along the c -axis of high-resistive Ni-doped zinc oxide (ZnO) thin film were examined. Zinc oxide thin film capacitor with Al/Ti top and bottom electrodes was fabricated on SiO 2 /Si substrate. Current saturation due to acoustoelectric effect in piezoelectric ZnO thin film was observed. The current saturation indicates that the drift velocity of electron reaches the sound velocity of ZnO and the electron mobility of ZnO along the c -axis was estimated to be 1–3 cm 2 V −1 s −1 . The electric field where the current saturates depended on the direction of the applied field and the internal residual stress in ZnO thin film, which indicate that the polarity of ZnO thin film deposited on Al/Ti is negative.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::637d2caa9b135261ab2617c5dc17b0fc https://doi.org/10.1016/j.vacuum.2004.01.028 Zobrazit plný text záznamu Full Text from ScienceDirect