4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Autor:	A.V. Suvorov, Gareth Johnson, Lori A. Lipkin, Ranbir Singh, John W. Palmour
Rok vydání:	2000
Předmět:	Materials science Mechanics of Materials business.industry Mechanical Engineering Optoelectronics General Materials Science Implant Condensed Matter Physics business Power (physics)
Zdroj:	Materials Science Forum. :1275-1278
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.338-342.1275
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::635d036bbce0bf3bf2d61f8e53284506 https://doi.org/10.4028/www.scientific.net/msf.338-342.1275 Zobrazit plný text záznamu