Optimization of deep-etched, single-mode GaAs-AlGaAs optical waveguides using controlled leakage into the substrate

Autor:	S.B. Jones, B.H. Smith, S.V. Dewar, J.M. Heaton, G.M. Berry, D.R. Wight, J. C. H. Birbeck, K.P. Hilton, Michelle M. Bourke, G.W. Smith
Rok vydání:	1999
Předmět:	Materials science business.industry Single-mode optical fiber Semiconductor device Cladding (fiber optics) Atomic and Molecular Physics and Optics Gallium arsenide chemistry.chemical_compound Optics chemistry Ternary compound Reactive-ion etching business Refractive index Leakage (electronics)
Zdroj:	Journal of Lightwave Technology. 17:267-281
ISSN:	0733-8724
DOI:	10.1109/50.744237
Popis:	This paper presents a detailed experimental and theoretical study of the properties of deep-etched GaAs-AlGaAs optical waveguides designed using a version of the spectral index method which predicts mode losses due to leakage through the lower cladding into the high index GaAs substrate. By predicting and measuring the mode losses due to this mechanism as a function of guide width, we show that waveguides formed by reactive ion etching through the core to the lower cladding layer can be both low-loss (0.2 dB/cm) and single-mode even with core thicknesses and guide widths as large as 4.8 and 5.6 /spl mu/m, respectively. We demonstrate the advantages of this type of guide for making compact integrated optic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::634ad4b04543ad04d4c0c04cb27f9cef https://doi.org/10.1109/50.744237 Zobrazit plný text záznamu