Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions

Autor:	Mohsen Nami, Paul J. M. Smeets, Jung Han, Alexander S. Chang, Bingjun Li, Lincoln J. Lauhon, Sizhen Wang
Rok vydání:	2021
Předmět:	Pulsed laser Materials science business.industry Doping Gallium nitride Atom probe Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Materials Chemistry Electrochemistry Optoelectronics business p–n junction
Zdroj:	ACS Applied Electronic Materials. 3:704-710
ISSN:	2637-6113
DOI:	10.1021/acsaelm.0c00863
Popis:	Nonplanar GaN p–n junctions formed by selective area regrowth were analyzed using pulsed laser atom probe tomography. Dilute Al marker layers were used to map the evolution of the p-GaN growth inte...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6348d8b0ad0a9287381e4b8ee663ea8a https://doi.org/10.1021/acsaelm.0c00863 Zobrazit plný text záznamu