Investigations of AlGaN/AlN/GaN MOS-HEMTs on Si Substrate by Ozone Water Oxidation Method

Autor:	Lung-Yi Tseng, Han-Yin Liu, Ching-Sung Lee, Wei-Chou Hsu, Bo-Yi Chou, Chiu-Sheng Ho, Chang-Luen Wu
Rok vydání:	2013
Předmět:	Materials science business.industry Transconductance Schottky effect Wide-bandgap semiconductor High-electron-mobility transistor Electronic Optical and Magnetic Materials MOSFET Breakdown voltage Optoelectronics Thermal stability Electrical and Electronic Engineering business Current density
Zdroj:	IEEE Transactions on Electron Devices. 60:2231-2237
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2013.2260753
Popis:	Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMTs) grown on Si substrates by using ozone water oxidation method are investigated. Superior improvements of 52.2% in two-terminal gate-drain breakdown voltage (BVGD), 30.3% in drain-source current density (IDS) at VGS = 0 V (IDSS0), 43.6% in maximum IDS (IDS,max), 34.7% in maximum extrinsic transconductance (gm,max), and 52.7%/34.3% in unity-gain cutoff/maximum oscillation frequency (fT/fmax) are achieved as compared with a reference Schottky-gated HEMT. Thermal stability is studied by conducting temperature-dependent characterizations of devices at ambient temperatures of 300-550 K. Time-dependent electrical reliability analyses for the devices stressed in off-state (VGS = -20 V and VDS = 0 V) for 0-60 h and on-state (VGS = 2 V and VDS = 20 V) for 0-20 h are also made to physically investigate the dominant degradation mechanisms. Excellent reliability and thermal stability at 300-550 K are achieved by the present design.
Databáze:	OpenAIRE
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