Features of the integration of graphenes in microelectronic technology
| Autor: | D. D. Levin, V. K. Nevolin, S. P. Chervonobrodov, N. Voznitsa, L. Khavelek, M. M. Simunin, I. I. Bobrinetskii, K. K. Lavrent’ev, A. Burian, L. D. Kvacheva, I. A. Komarov |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Graphene technology industry and agriculture Nanotechnology Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Materials Chemistry Microelectronics Deposition (phase transition) Wafer Graphite Electrical and Electronic Engineering business Graphene nanoribbons Graphene oxide paper |
| Zdroj: | Russian Microelectronics. 43:477-482 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739714070038 |
| Popis: | Techniques have been developed for forming integrated graphene structures on a silicon wafer surface by mechanical and chemical splitting and chemical vapor deposition. The imperfection of the fabricated structures has been investigated by atomic force microscopy and X-ray diffraction. For the aerosol technique of deposition of mechanically spit graphite, the regularity has been revealed in the reduction of the graphene sheet size with increasing pressure. The correlation of the topographic defects of graphene material and the structural defects observed in X-ray diffraction patterns is demonstrated. |
| Databáze: | OpenAIRE |
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