Autor: |
R. R. Arya, G. Ganguly, M. Bennett, F. Willing, G. Lin, D. E. Carlson, L. F. Chen, R. Middya, F. Jackson, J. Newton, G. Wood, M. He |
Rok vydání: |
1999 |
Předmět: |
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Zdroj: |
AIP Conference Proceedings. |
DOI: |
10.1063/1.57954 |
Popis: |
R & D on amorphous silicon based tandem junction devices has improved the throughtput, the material utilization, and the performance of devices on commercial tin oxide coated glass. The tandem junction technology has been scaled-up to produce 8.6 Ft2 monolithically integrated modules in manufacturing at the TF1 plant. Optimization of performance and stability of these modules is ongoing. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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