| Autor: |
Arnulf Leuther, J. Antes, Ingmar Kallfass, T. Messinger, Sandrine Wagner |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE 15th Mediterranean Microwave Symposium (MMS). |
| DOI: |
10.1109/mms.2015.7375385 |
| Popis: |
Two G-band (140 to 220 GHz) injection-locked frequency divider (ILFD) monolithic microwave integrated circuits (MMICs) have been developed in a 35nm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) process for application in signal sources of next generation multi gigabit per second communication links and high-resolution imaging systems. Both devices are based on a cascode divider core followed by a single-stage post-amplifier, but differ in the 50 and 14 µm ground-to-ground spacing of the applied grounded coplanar waveguide (GCPW) environment. The measured maximum input frequencies at a 0dBm input power level are 206 and 210 GHz with wide operating bandwidths of 26 and 14 GHz and relative bandwidths of 13 and 7 %, respectively. To the authors' best knowledge, this represents the highest operating frequencies obtained by frequency dividers in GaAs HEMT based technologies. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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