DOE study on etching rate of silicon nitride (Si3N4) layer via RIE nitride etching process

Autor:	M.R. Yahya, Hariyadi Soetedjo, Ashaari Yusof, N.A. Ngah, N.H. Ghazali, A. Dolah
Rok vydání:	2008
Předmět:	Materials science Passivation Silicon business.industry chemistry.chemical_element Nitride Volumetric flow rate chemistry.chemical_compound chemistry Silicon nitride Etching (microfabrication) Optoelectronics Dry etching Reactive-ion etching business
Zdroj:	2008 IEEE International Conference on Semiconductor Electronics.
DOI:	10.1109/smelec.2008.4770409
Popis:	In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF4 / O2 gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O2 and CF4 flow rate of 5-10 sccm and 40-50 sccm respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6323ccbb408fec2fada0ad0ab71a27a3 https://doi.org/10.1109/smelec.2008.4770409 Zobrazit plný text záznamu