On the temperature dependence of the Hooge parameter αH in n and p-channel silicon JFETs
| Autor: | C.M. Van Vliet, G.S. Kousik, A. van der Ziel, A.H. Pawlikiewicz |
|---|---|
| Rok vydání: | 1988 |
| Předmět: |
Silicon
Condensed matter physics business.industry Electrical engineering chemistry.chemical_element Condensed Matter Physics Umklapp scattering Electronic Optical and Magnetic Materials P channel chemistry Materials Chemistry Electrical and Electronic Engineering business Acoustic phonon scattering |
| Zdroj: | Solid-State Electronics. 31:233-236 |
| ISSN: | 0038-1101 |
| Popis: | The experimental values of α H of n -channel Si-JFETs are compared with recent calculations by Kousik for the intervalley and acoustic phonon scattering. The average value of α H due to these two processes is only a factor 3–4 larger than the empirical date indicates. However, the best agreement with the experiment comes from the semi-heuristic formula for Umklapp scattering, modified by the temperature dependent factor[1]. Incorporation of U-type processes into the numerical model of Kousik and van Vliet for the Hooge parameter could possibly reduce the present difference even further. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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