Interfacial reaction of erbium on homoepitaxial diamond (100) films

Autor: C. Saby, F. Pruvost, Pierre Muret, T.A. Nguyen Tan
Rok vydání: 2000
Předmět:
Zdroj: Applied Surface Science. 166:119-124
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(00)00392-5
Popis: The atomic and electronic characteristics of homoepitaxial C(100) thin films and their reactions with very thin erbium deposits have been studied by low-energy electron diffraction (LEED) and photoelectron spectroscopy (X-ray photoelectron spectroscopy [XPS] and ultraviolet photoelectron spectroscopy [UPS]). These films, of 3 μm thick, are grown by microwave chemical vapor deposition (CVD) and p-doped (1017 B/cm3). Measurements are made on two types of surfaces: plasma-hydrogenated and chemically oxidized. The hydrogenated surfaces exhibit 2(2×1) LEED pattern and negative electron affinity (NEA). Under annealing at high temperature (500–650°C) in oxygen (1 to 5×10−5 mbar), the hydrogenated surface is transformed slowly into an oxidized one which has the same atomic and electronic structures as the chemically oxidized surface, namely a (1×1) LEED diagram and a positive electron affinity (PEA). Under annealing at high temperature, erbium deposits react with the hydrogenated surface and not with the oxidized one. The reaction is not complete and produces a very thin interface erbium carbide layer. Internal photoemission measurements performed on erbium carbide/diamond contacts, protected against oxidation by a layer of erbium silicide, show potential barrier heights close to 1.9 eV.
Databáze: OpenAIRE
Externí odkaz: