Photovoltage studies of aluminum–phthalocyanine interfaces
Autor: | D. K. Murti, John H. Slowik, Leonard J. Brillson |
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Rok vydání: | 1982 |
Předmět: | |
Zdroj: | Journal of Vacuum Science and Technology. 20:233-236 |
ISSN: | 0022-5355 |
DOI: | 10.1116/1.571363 |
Popis: | A study of metal–organic semiconductor interfaces has been undertaken. This article is devoted to aluminum–phthalocyanine (H2Pc) interfaces. The interfaces were characterized by surface photovoltage spectroscopy (SPS) and x‐ray photoelectron spectroscopy (XPS) under ultrahigh vacuum (UHV) conditions. The spectroscopic characterization was followed by electrical characterization (I–V measurements) both in UHV and in air. The results of this study suggest that the surface contamination on phthalocyanine produced by air‐exposure is necessary to produce a large band bending. Clean surfaces of phthalocyanine produced by Ar bombardment do not yield large barriers. |
Databáze: | OpenAIRE |
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