Photovoltage studies of aluminum–phthalocyanine interfaces

Autor: D. K. Murti, John H. Slowik, Leonard J. Brillson
Rok vydání: 1982
Předmět:
Zdroj: Journal of Vacuum Science and Technology. 20:233-236
ISSN: 0022-5355
DOI: 10.1116/1.571363
Popis: A study of metal–organic semiconductor interfaces has been undertaken. This article is devoted to aluminum–phthalocyanine (H2Pc) interfaces. The interfaces were characterized by surface photovoltage spectroscopy (SPS) and x‐ray photoelectron spectroscopy (XPS) under ultrahigh vacuum (UHV) conditions. The spectroscopic characterization was followed by electrical characterization (I–V measurements) both in UHV and in air. The results of this study suggest that the surface contamination on phthalocyanine produced by air‐exposure is necessary to produce a large band bending. Clean surfaces of phthalocyanine produced by Ar bombardment do not yield large barriers.
Databáze: OpenAIRE