Phonon-Assisted Tunneling in Metal-Oxide-Pb1-xSnxTe Junctions
Autor: | Akihiro Moritani, Chihiro Hamaguchi, Masamichi Yokogawa, Junkichi Nakai, Tsuguru Shirakawa |
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Rok vydání: | 1977 |
Předmět: | |
Zdroj: | Journal of the Physical Society of Japan. 43:108-113 |
ISSN: | 1347-4073 0031-9015 |
DOI: | 10.1143/jpsj.43.108 |
Popis: | Electron tunneling effects of Pb 1- x Sn x Te are investigated in M-I-S junctions. Phonon-assisted tunneling effects are observed in the d 2 I /d V 2 - V characteristics. Assignments of four peaks which appear antisymmetric with respect to zero bias in the d 2 I /d V 2 - V characteristics are made by measuring the composition-dependence of energy positions of these peaks. These assignments are examined from the group theoretical point of view. The energies of the LO phonons at \(\varGamma\) point are 14.3±0.5 meV for PbTe and 17.1±0.5 meV for SnTe, which are in good agreement with the results obtained by the other methods. |
Databáze: | OpenAIRE |
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